Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5298098
Kind Code:
B2
Abstract:
It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present invention, when Ni element (Ni) is used as the metal element and a silicon-based film (referred to as a silicon film) is used as the semiconductor film, nickel silicide segregates in the ridge formed in the silicon film by irradiating the pulsed laser light. Next, etching solution of hydrofluoric acid based etchant is used to remove the nickel silicide segregated in the ridge. When the surface of the semiconductor film is rough after removing the metal element by means of etching, the laser light may be irradiated to the semiconductor film under the insert atmosphere to flatten the surface thereof.
Inventors:
Akihisa Shimomura
Hideto Onuma
Hironobu Koji
Hideto Onuma
Hironobu Koji
Application Number:
JP2010245181A
Publication Date:
September 25, 2013
Filing Date:
November 01, 2010
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/268; H01L21/322; H01L21/336; H01L21/77; H01L21/84; H01L29/786
Domestic Patent References:
| JP2003173968A |
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