To provide a solid vacuum device that can have high performance.
A thermal device element portion 20 supported by a first polysilicon layer 12 is formed on one surface side of a silicon substrate 10, and a cap portion 40 for vacuum sealing is formed enclosing the thermal device element portion 20. The cap portion 40 for vacuum sealing includes: a porous portion 42 for vacuum sealing, the porous portion being formed by subjecting, to anodic oxidation, part of a second polysilicon layer 41 formed on the one surface side of the silicon substrate 10; and a cap layer 43 laminated on the porous portion 42 for vacuum sealing. A first space 15 of the thermal device element portion 20 on the side of the silicon substrate 10 and a second space 35 on the side of the cap portion 40 for vacuum sealing are evacuated. The solid vacuum device includes a heat insulation portion 13 comprised of a porous polysilicon portion formed by subjecting part of the first polysilicon layer 12 to anodic oxidation and thermally insulating the thermal device element portion 20 and silicon substrate 10.
COPYRIGHT: (C)2010,JPO&INPIT
Yoshifumi Watanabe
Yuichi Inaba
| JP2002205299A | ||||
| JP2004271386A |