Title:
プラズマ原子層堆積を実行する方法及びシステム
Document Type and Number:
Japanese Patent JP5312036
Kind Code:
B2
Abstract:
A method, computer readable medium, and system for vapor deposition on a substrate that introduce a gaseous film precursor to a process space, increase the volume of the process space from a first size to a second size to form an enlarged process space, introduce a reduction gas to the enlarged process space, and form a reduction plasma from the reduction gas. The system for vapor deposition includes a process chamber including a first process space and further including a second process space that includes the first process space and that has a second volume that exceeds the first volume. The first process space is configured for atomic layer deposition, and the second process space is configured for plasma reduction of a layer deposited in the first process space.
Inventors:
Jackie
Application Number:
JP2008541231A
Publication Date:
October 09, 2013
Filing Date:
November 09, 2006
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/44; H01L21/205; H01L21/28; H01L21/285
Domestic Patent References:
| JP2005082888A | ||||
| JP2005248231A |
Foreign References:
| WO2004085703A1 |
Attorney, Agent or Firm:
Tadahiko Ito