Title:
薄膜付ウェーハの評価方法
Document Type and Number:
Japanese Patent JP5365581
Kind Code:
B2
Abstract:
According to the present invention, there is provided a method for evaluating a thin-film-formed wafer, the method being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength » is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. As a result, it is possible to provide the method for evaluating a thin-film-formed wafer that enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner.
Inventors:
Noboru Kuwahara
Application Number:
JP2010122187A
Publication Date:
December 11, 2013
Filing Date:
May 28, 2010
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/66; H01L27/12
Domestic Patent References:
| JP9218017A | ||||
| JP7134007A | ||||
| JP7260437A | ||||
| JP5248825A |
Attorney, Agent or Firm:
Mikio Yoshimiya