To solve a problem that a conventional MONOS has a configuration for storing charges in SiN, but the charge storage amount is not sufficient, the variational width of a threshold voltage cannot be made large, and consequently high electric charge density by means of dopant introduction cannot be realized by a technique of introducing lanthanoids into HfO
A nonvolatile semiconductor memory includes an electric charge accumulating layer, having a configuration in which a metal oxide having sufficiently higher dielectric constant than silicon nitride such as Zr oxide or Hf oxide, a dielectric constant of which is sufficiently larger than that of silicon nitride film, is used as a base material; and into which a proper amount of high-valence substance with a valence higher by two or more than that of the metal of the base material (i.e., the valence is six or more) is added, in order to generate therein a trapping level allowing electrons to enter/exit.
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Koichi Muraoka
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