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Title:
電気絶縁性半導体基板のMgOベースのコーティング及びその製造方法
Document Type and Number:
Japanese Patent JP5373287
Kind Code:
B2
Abstract:
The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.

Inventors:
Celine Bondou
Philip Plene
Philip Belleville
Robert Gerician
Application Number:
JP2007536235A
Publication Date:
December 18, 2013
Filing Date:
October 12, 2005
Export Citation:
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Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
H01L21/316; C04B35/053; C01F5/06
Domestic Patent References:
JP6057439A
JP2001031681A
JP3190984A
JP8111177A
JP5283401A
JP2003258242A
JP5139895A
JP10070273A
JP2002043482A
JP63192895A
JP58130546A
JP60014442A
JP2001279442A
JP2001110321A
JP9110417A
JP10233157A
JP8329844A
JP6293879A
JP5139892A
JP1234569A
Foreign References:
US6091108
US6025608
US2796364
WO1999013512A1
WO1999039389A2
WO1997024304A2
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro



 
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