Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5379331
Kind Code:
B2
Abstract:
A semiconductor device including a semiconductor layer, a plurality of electrode portions each overlapping the semiconductor layer, and an insulating film placed between the plurality of electrode portions to lie on the semiconductor layer is fabricated. The fabrication method includes the steps of: forming an oxide semiconductor layer part of which is covered with the insulating film; forming a conductive material layer to cover the oxide semiconductor layer and the insulating film; forming the plurality of electrode portions from the conductive material layer by photolithography and plasma dry etching, to expose part of the oxide semiconductor layer from the plurality of electrode portions and the insulating film; and removing the part of the oxide semiconductor layer exposed from the plurality of electrode portions and the insulating film to form the semiconductor layer.
Inventors:
Mitsunobu Miyamoto
Application Number:
JP2013502181A
Publication Date:
December 25, 2013
Filing Date:
February 22, 2012
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/336; H01L29/786
Domestic Patent References:
| JP2011097103A | 2011-05-12 | |||
| JP2010226101A | 2010-10-07 | |||
| JP2010103360A | 2010-05-06 | |||
| JP2010123748A | 2010-06-03 | |||
| JP2011097103A | 2011-05-12 | |||
| JP2010226101A | 2010-10-07 | |||
| JP2010103360A | 2010-05-06 | |||
| JP2010123748A | 2010-06-03 |
Attorney, Agent or Firm:
Maeda patent office