Title:
半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP5380797
Kind Code:
B2
Abstract:
In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si-CH3 bond and Si-OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ray photoelectron spectroscopy is not more than 30%, and the rate of decrease of one or more bonds selected from the group consisting of C-H bond, O-H bond and Si-O bond of Si-OH is not less than 10%, as a result of ultraviolet ray irradiation. A low-dielectric-constant insulator film that has a high film strength and can prevent increase of dielectric constant due to moisture absorption, a semiconductor device that can prevent device response speed delay and reliability decrease due to parasite capacity increase, and a manufacturing method therefor are provided.
Inventors:
Shiro Ozaki
Yoshihiro Nakata
Ei Yano
Yoshihiro Nakata
Ei Yano
Application Number:
JP2007176433A
Publication Date:
January 08, 2014
Filing Date:
July 04, 2007
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/312; H01L21/316; H01L21/768; H01L23/522
Domestic Patent References:
| JP2005350653A | ||||
| JP11026444A | ||||
| JP2006093657A | ||||
| JP2006135213A | ||||
| JP2004312004A | ||||
| JP2004274052A |
Foreign References:
| WO2007032563A1 |
Attorney, Agent or Firm:
Kenji Doi
Hayashi Tsunetoku
Hayashi Tsunetoku