To provide a film having permittivity which can be controlled by external stimulation and can be varied by light irradiation, and to provide an electronic device using the same.
A thin film transistor 20 includes a glass substrate 21, a gate electrode 22, a gate insulating film 23, a semiconductor layer (active layer) 24, a source electrode 25 and a drain electrode 26. The gate electrode 22, the gate insulating film 23 and the semiconductor layer 24 are laminated on the glass substrate 21 in this order. The source electrode 25 and the drain electrode 26 are formed on the semiconductor layer 24. The gate insulating film 23 is formed by spin-coating the gate insulating film formed on the glass substrate with a solution containing an organic polymer and a compound dispersed in the organic polymer. The compound is at least one kind of a compound selected from a compound represented by a formula (1) and a compound represented by a formula (2). In the formula (1), R
COPYRIGHT: (C)2011,JPO&INPIT
Heisuke Sakai
Shunichi Fukuzumi
Kei Okubo
Motonobu Murakami
National University Corporation Osaka University
JP2004230762A | ||||
JP6507661A |
Shigeru Kuroda