Title:
不揮発性記憶装置
Document Type and Number:
Japanese Patent JP5383882
Kind Code:
B1
Abstract:
According to one embodiment, a nonvolatile memory device includes: a magnetic memory element and a control unit. The magnetic memory element includes a stacked body, and a first and a second stacked units. The first stacked unit includes a first and second ferromagnetic layers and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer and a nonmagnetic tunneling barrier layer stacked with the third ferromagnetic layer. The control unit is configured to implement a first operation of setting the magnetic memory element to be in a first state. The first operation includes a first preliminary operation of applying a first pulse voltage; and a first setting operation of applying a second pulse voltage having a second rising time to the magnetic memory element after the first preliminary operation.
Inventors:
Daisuke Saida
Minoru Amano
Naoji Shimomura
Minoru Amano
Naoji Shimomura
Application Number:
JP2012213274A
Publication Date:
January 08, 2014
Filing Date:
September 26, 2012
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G11C11/15; H01L21/8246; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| JP2012064904A | 2012-03-29 | |||
| JP2012003817A | 2012-01-05 | |||
| JP2009158665A | 2009-07-16 | |||
| JP2009021352A | 2009-01-29 | |||
| JP2007300079A | 2007-11-15 | |||
| JP2012064904A | 2012-03-29 | |||
| JP2012003817A | 2012-01-05 | |||
| JP2009158665A | 2009-07-16 | |||
| JP2009021352A | 2009-01-29 | |||
| JP2007300079A | 2007-11-15 |
Attorney, Agent or Firm:
Masahiko Hinataji