Title:
改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。
Document Type and Number:
Japanese Patent JP5389356
Kind Code:
B2
Abstract:
A semiconductor device is disclosed that includes a layer of Group III nitride semiconductor material that includes at least one surface, a control contact on the surface for controlling the electrical response of the semiconductor material, a dielectric barrier layer covering at least a portion of the one surface adjacent the control contact, the dielectric barrier layer having a bandgap greater than the bandgap of the Group III nitride and a conduction band offset from the conduction band of the Group III nitride; and a dielectric protective layer covering the remainder of the Group III nitride surface.
Inventors:
Smith, Richard Peter
Shepherd, Scott Tea
Palmore, John Williams
Shepherd, Scott Tea
Palmore, John Williams
Application Number:
JP2007515170A
Publication Date:
January 15, 2014
Filing Date:
May 16, 2005
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L21/338; H01L21/28; H01L21/283; H01L21/314; H01L21/316; H01L21/335; H01L29/778; H01L29/812; H01L31/108; H01L23/31; H01L29/20
Domestic Patent References:
| JP200386608A | ||||
| JP2000252458A | ||||
| JP2003115487A | ||||
| JP200012563A | ||||
| JP6177157A |
Foreign References:
| WO2003032397A2 |
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Hiroyuki Tomita
Osamu Hoshino
Omaki Ayako
Yasushi Kobayashi
Hiroyuki Tomita
Osamu Hoshino
Omaki Ayako