Title:
ＳｉＧｅへテロ接合バイポーラ・トランジスタにおける移動度の向上
Document Type and Number:
Japanese Patent JP5400382
Kind Code:
B2
Abstract:
The present invention relates to a high performance heterojunction bipolar transistor (HBT) having a base region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 nm thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content. The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.
Inventors:
チダンバラオ, デュレセティ
Adam, Thomas, N
Adam, Thomas, N
Application Number:
JP2008528237A
Publication Date:
January 29, 2014
Filing Date:
August 25, 2006
Export Citation:
Assignee:
International Business Machines corporation INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L21/331; H01L21/20; H01L29/737
Attorney, Agent or Firm:
Tsuyoshi Ueno
Tasa Kind 1
About a city Yoshihiro
Hiroshi Sakaguchi
Tasa Kind 1
About a city Yoshihiro
Hiroshi Sakaguchi