Title:
ギャップ充填と共形のフィルムの適用のために低Ｋ膜を堆積させ硬化する方法
Document Type and Number:
Japanese Patent JP5401309
Kind Code:
B2
Abstract:
Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.
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Inventors:
ムンロ, Jeffrey, and See.
ネマーニ, スリニヴァス, and Dee.
ネマーニ, スリニヴァス, and Dee.
Application Number:
JP2009513422A
Publication Date:
January 29, 2014
Filing Date:
May 29, 2007
Export Citation:
Assignee:
Applied Materials In condominium lei テッド APPLIED MATERIALS and INCORPORATED
International Classes:
H01L21/316; C23C16/42
Attorney, Agent or Firm:
Yoshitaka Sonoda
Yoshinori Kobayashi
Yoshinori Kobayashi