Title:
窒素固定化材料及びその製造方法並びに窒素固定化方法
Document Type and Number:
Japanese Patent JP5401666
Kind Code:
B2
Abstract:
A composite material comprising a photocatalytically active inorganic oxide semiconductor and a conductive polymer in contact with the semiconductor. It has a significantly improved nitrogen fixation efficiency. A photocatalytic composite material obtained by combining an inorganic oxide semiconductor having a photocatalytic function with a solvent-soluble or solvent-dispersible conductive polymer so that the polymer is in contact with the semiconductor is irradiated with light to fix nitrogen gas in air in the form of an ammonium salt and ammonia. For bringing a conductive polymeric material into contact with a photocatalytically active inorganic oxide semiconductor, the technique of applying a coating fluid may be used in order to inhibit a decrease in the number density of oxygen-deficient sites, which play a role in a nitrogen fixation reaction.
Inventors:
Katsuyoshi Hoshino
柴 Tomoshi
柴 Tomoshi
Application Number:
JP2007058585A
Publication Date:
January 29, 2014
Filing Date:
March 08, 2007
Export Citation:
Assignee:
National University Corporation Chiba University
International Classes:
B01J35/02; B01J37/02; C01C1/04