Title:
多重量子井戸構造を有するオプトエレクトロニクス半導体チップ
Document Type and Number:
Japanese Patent JP5404628
Kind Code:
B2
Abstract:
An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.
Inventors:
Stauss Peter
Peter Matthias
Walter alexander
Peter Matthias
Walter alexander
Application Number:
JP2010526158A
Publication Date:
February 05, 2014
Filing Date:
September 12, 2008
Export Citation:
Assignee:
Osram Opto Semiconductors GmbH
International Classes:
H01L33/06; H01L33/32; H01L33/04
Domestic Patent References:
| JP2003115642A | ||||
| JP2005507155A | ||||
| JP2003229645A | ||||
| JP2001053339A | ||||
| JP10294532A | ||||
| JP2000349337A |
Attorney, Agent or Firm:
Koichi Washida