Title:
ペンデオ・エピタキシシャル成長基板及びその形成方法
Document Type and Number:
Japanese Patent JP5405718
Kind Code:
B2
Abstract:
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
Inventors:
White goodness
Zhang Tai
Performance
Shizuka Tan
Liang Bun Hoho
Zhang Tai
Performance
Shizuka Tan
Liang Bun Hoho
Application Number:
JP2007036906A
Publication Date:
February 05, 2014
Filing Date:
February 16, 2007
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
C30B29/38; C30B25/18; H01L21/205
Domestic Patent References:
| JP2001313259A | ||||
| JP4271115A | ||||
| JP2003007999A | ||||
| JP2003514392A |
Attorney, Agent or Firm:
Hatta International Patent Corporation
Kyosei International Patent Office
Kyosei International Patent Office