Title:
熱電材料及びその製造方法並びにそれを用いた熱電変換モジュール
Document Type and Number:
Japanese Patent JP5424436
Kind Code:
B1
Abstract:
A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.
Inventors:
Yoshiaki Nakamura
Masayuki Igawa
Tomohiro Ueda
Yoshikawa Jun
Akira Sakai
Hideo Hosono
Masayuki Igawa
Tomohiro Ueda
Yoshikawa Jun
Akira Sakai
Hideo Hosono
Application Number:
JP2013543430A
Publication Date:
February 26, 2014
Filing Date:
May 15, 2013
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01L35/32; H01L35/14; H01L35/26; H01L35/34
Domestic Patent References:
| JP5343746A | ||||
| JP2005303249A | ||||
| JP200276452A | ||||
| JP10209508A | ||||
| JP2006190773A |
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mikio Takeuchi
Mitsuo Tanaka
Mikio Takeuchi