Title:
高周波電源装置
Document Type and Number:
Japanese Patent JP5426811
Kind Code:
B2
Abstract:
The present invention provides a high frequency power supply device and a high frequency power supplying method, which can control and supply high frequency power effective on generation of plasmas in a short time with a high precision. The device at least includes a first high frequency power supply block (11), which supplies a plasma processing chamber (5) with a high frequency power at a first frequency f1, and a second high frequency power supply block (71), which supplies the plasma processing chamber with a high frequency power at a second frequency f2 (f1>f2). The first high frequency power supply block (11) includes: a first high frequency oscillating block (16), which excites the high frequency power at the first frequency and has a variable frequency; a first power amplification block (15), which receives an output of the first high frequency oscillating block and amplifies the power thereof; a heterodyne detection block (13), which performs heterodyne detection of a reflected wave; and a first control block (14), which receives a signal after detection at the heterodyne detection block and a traveling wave signal, and controls an oscillating frequency of the first high frequency oscillating block and an output of the first power amplification block.
Inventors:
Eiichi Hayano
Takeshi Nakamura
Yasunori Maekawa
Hiroshi Iizuka
Chen Yuan
Takeshi Nakamura
Yasunori Maekawa
Hiroshi Iizuka
Chen Yuan
Application Number:
JP2006314962A
Publication Date:
February 26, 2014
Filing Date:
November 22, 2006
Export Citation:
Assignee:
Pearl Industry Co., Ltd.
Micro Semiconductor Equipment (Shanghai) Co., Ltd.
Micro Semiconductor Equipment (Shanghai) Co., Ltd.
International Classes:
H05H1/46; H01L21/3065
Domestic Patent References:
| JP2003179030A | ||||
| JP10064696A | ||||
| JP2007532028A | ||||
| JP2008501224A | ||||
| JP10241895A |
Foreign References:
| US6791274 | ||||
| US20050264218 |
Attorney, Agent or Firm:
Seiichi Watanabe