To provide a semiconductor package that can excellently dissipate heat from a semiconductor device and is applicable to high frequencies of the microwave/millimeter wave/submillimeter wave bands, and to provide a method of fabricating the same.
The semiconductor package includes: a conductor base plate 200 having a buried electrode 30 which has a first coefficient of thermal expansion and has a predetermined pattern shape, and a base electrode 22 having the buried electrode 30 inside and also having a second coefficient of thermal expansion higher than the first coefficient of thermal expansion and higher thermal conductivity than the buried electrode 30; a semiconductor device 24 arranged on the conductor base plate 200; and an input circuit board 26 and an output circuit board 28 arranged on the conductor base plate 200 while being adjacent to the semiconductor device 24 and having a third coefficient of thermal expansion relatively equal to the first coefficient of thermal expansion than to the second coefficient of thermal expansion. There is also provided the method of fabricating the same.
COPYRIGHT: (C)2010,JPO&INPIT
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Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
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