Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
半導体装置
Document Type and Number:
Japanese Patent JP5434725
Kind Code:
B2
Inventors:
Ogata Shin
Kenji Shioga
Shigenori Aoki
Application Number:
JP2010064919A
Publication Date:
March 05, 2014
Filing Date:
March 19, 2010
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
富士通株式会社
International Classes:
H01L23/427; F28D15/02; H01L23/473
Domestic Patent References:
JP2008267743A
JP2007163076A
Attorney, Agent or Firm:
Kenji Doi
Hayashi Tsunetoku



 
Previous Patent: JPS5434724

Next Patent: MIS-TYPE SEMICONDUCTOR MEMORY UNIT