Title:
多重ウェルCMOSイメージセンサ及びその製造方法
Document Type and Number:
Japanese Patent JP5455325
Kind Code:
B2
Abstract:
Provided is a multi-well CMOS image sensor and a method of fabricating the same. The multi-well CMOS image sensor may include a plurality of photodiodes vertically formed in a region of a substrate, an n+ wall that vertically connects an outer circumference of the photodiodes, and a floating diffusion region that is connected to the photodiodes on a side of the n+ wall to receive charges from the photodiodes, wherein a p-type region is formed between the floating diffusion region and the n+ wall, and the plurality of photodiodes have a multi-potential well structure.
Inventors:
Kanazawa
Application Number:
JP2008131192A
Publication Date:
March 26, 2014
Filing Date:
May 19, 2008
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L27/146
Domestic Patent References:
| JP2000031525A | ||||
| JP2000091552A | ||||
| JP2008016542A |
Foreign References:
| US20060076588 | ||||
| WO2007005267A1 | ||||
| WO2004075299A1 | ||||
| US7154137 |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro