Title:
半導体装置及び液晶表示装置
Document Type and Number:
Japanese Patent JP5455825
Kind Code:
B2
Abstract:
An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
Inventors:
Shunpei Yamazaki
Junichiro Sakata
Hiroyuki Miyake
Hideaki Kuwahara
Tatsuya Takahashi
Junichiro Sakata
Hiroyuki Miyake
Hideaki Kuwahara
Tatsuya Takahashi
Application Number:
JP2010160035A
Publication Date:
March 26, 2014
Filing Date:
July 14, 2010
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; H01L29/786; H01L21/336; H01L51/50; H05B33/14; H05B44/00
Domestic Patent References:
| JP5053147A | ||||
| JP11354802A | ||||
| JP2007316110A | ||||
| JP2001051292A | ||||
| JP2007250983A | ||||
| JP2007123861A |