Title:
アンバイポーラ物質を利用した電界効果トランジスタ及び論理回路
Document Type and Number:
Japanese Patent JP5456987
Kind Code:
B2
Abstract:
Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.
Inventors:
Zheng Chong
Zheng Lanju
Xu Jun Ai
Kin Tohru
Lee
Zheng Lanju
Xu Jun Ai
Kin Tohru
Lee
Application Number:
JP2008135976A
Publication Date:
April 02, 2014
Filing Date:
May 23, 2008
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L29/786; H01L21/822; H01L21/8238; H01L27/04; H01L27/08; H01L27/092
Domestic Patent References:
| JP2002261288A | ||||
| JP2006501654A | ||||
| JP2004256510A |
Foreign References:
| US20030186059 | ||||
| WO2007097938A1 |
Attorney, Agent or Firm:
Takashi Watanabe
Shinya Mitsuhiro
Shinya Mitsuhiro