電界効果トランジスタの製造方法 - THE FURUKAW ELECTRIC CO.,LTD.

Title:

電界効果トランジスタの製造方法

Document Type and Number:

Japanese Patent JP5463529

Kind Code:

B2

More Like This:

JPH10313067	PROCESS FOR REALIZING INTERMEDIATE DIELECTRIC LAYER FOR IMPROVING PLANARIZATION IN SEMICONDUCTOR ELECTRONIC DEVICE
JP2012195580	FIELD EFFECT TRANSISTOR GATE INSULATION LAYER COMPOSITION, GATE INSULATION LAYER, FIELD EFFECT TRANSISTOR, AND DISPLAY PANEL
JP5653436	Polymer semiconductors, devices, and related methods

Inventors:

Takehiko Nomura
Niiyama Yuki
Hiroshi Kambayashi
Kiyoteru Yoshida
Cho, Tatsushin Paul

Application Number:

JP2009140583A

Publication Date:

April 09, 2014

Filing Date:

June 11, 2009

Export Citation:

Assignee:

THE FURUKAW ELECTRIC CO.,LTD.
Rensselaer Polytechnic Institute

International Classes:

H01L29/786; H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/812

Domestic Patent References:

Foreign References:

WO2003071607A1

Attorney, Agent or Firm:

Hiroaki Sakai
Tashiro Toshio

Previous Patent: SEALED SHIELD DRIVING METHOD

Next Patent: METHOD OF AND DEVICE FOR PROTECTING SEA BOTTOM SURFACE