Title:
単結晶を製造する方法及び装置
Document Type and Number:
Japanese Patent JP5485136
Kind Code:
B2
Abstract:
A method is disclosed for producing a single crystal comprising passing a polycrystalline rod through a heating region to create a molten zone, applying a magnetic field to the molten zone, and inducing growth of a single crystal upon solidification of the molten material on a single crystal seed. The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method.
Inventors:
Pell, Barbengard
Anne, Nielsen
Tice, Les, Larsen
Yang, Aving, Petersen
Leif, Jensen
Anne, Nielsen
Tice, Les, Larsen
Yang, Aving, Petersen
Leif, Jensen
Application Number:
JP2010502418A
Publication Date:
May 07, 2014
Filing Date:
April 13, 2007
Export Citation:
Assignee:
Topsil Semiconductor Materials Actiesel Scab
International Classes:
C30B13/26; C30B13/24; C30B13/28; C30B29/06
Domestic Patent References:
| JP7315980A | ||||
| JP1252596A | ||||
| JP5043377A | ||||
| JP2002249393A | ||||
| JP2003055089A | ||||
| JP2003313087A | ||||
| JP7006972A |
Attorney, Agent or Firm:
Kenji Yoshitake
Yukitaka Nakamura
Konno Akio
Noritaka Yokota
Mari Asano
Yukitaka Nakamura
Konno Akio
Noritaka Yokota
Mari Asano
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