Title:
薄膜トランジスタにおけるN型半導体材料
Document Type and Number:
Japanese Patent JP5485981
Kind Code:
B2
Abstract:
A thin film transistor comprises a layer of organic semiconductor that comprises an N,N'-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.
Inventors:
Shukura, Deepak
Welter, thomas robert
Welter, thomas robert
Application Number:
JP2011503965A
Publication Date:
May 07, 2014
Filing Date:
March 17, 2009
Export Citation:
Assignee:
Eastman Kodak Company
International Classes:
H01L51/30; C07D471/06; G02F1/1368; H01L21/336; H01L29/786; H01L51/05
Domestic Patent References:
| JP2006045165A |
Foreign References:
| WO2007061614A1 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Satoshi Deno
Atsushi Ebiya
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Satoshi Deno
Atsushi Ebiya