Title:
二重仕事関数金属ゲート構造体及びその製造方法
Document Type and Number:
Japanese Patent JP5490188
Kind Code:
B2
Abstract:
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
Inventors:
Gold Min Ju
Lee Jong Ho
Korean
Ting
Lee Jong Ho
Korean
Ting
Application Number:
JP2012151231A
Publication Date:
May 14, 2014
Filing Date:
July 05, 2012
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/8238; H01L21/28; H01L21/336; H01L27/092; H01L29/423; H01L29/49; H01L29/78; H01L29/786
Domestic Patent References:
| JP2004207481A | ||||
| JP2001203276A | ||||
| JP2003273350A | ||||
| JP2002134741A | ||||
| JP2007525827A |
Foreign References:
| US20060084217 |
Attorney, Agent or Firm:
Takashi Watanabe
Shinya Mitsuhiro
Shinya Mitsuhiro
Previous Patent: 薄板検査装置、薄板検査方法、及び、薄板の製造方法
Next Patent: PREPARATION OF CARBOXYLIC ACID POLYNUCLEAR METAL COMPLEX
Next Patent: PREPARATION OF CARBOXYLIC ACID POLYNUCLEAR METAL COMPLEX