Title:
半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP5521981
Kind Code:
B2
Abstract:
A semiconductor light-emitting device which includes: a single-crystal substrate formed with a plurality of projection portions on a c-plane main surface; an intermediate layer which is formed to cover the main surface of the single-crystal substrate, in which a film thickness t2 on the projection portion is smaller than a film thickness t1 on the c-plane surface, in which the film thickness t2 on the projection portion is 60% or more of the film thickness t1 on the c-plane surface, and which includes AlN having a single-crystal phase on the c-plane surface and a polycrystalline phase on the projection portion; and a semiconductor layer which is formed on the intermediate layer and includes a group III nitride semiconductor.
Inventors:
Yokoyama Yasunori
Application Number:
JP2010249987A
Publication Date:
June 18, 2014
Filing Date:
November 08, 2010
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
H01L33/22; H01L33/32
Domestic Patent References:
| JP201040867A | ||||
| JP2009123717A | ||||
| JP192369A | ||||
| JP1270321A |
Attorney, Agent or Firm:
Sumio Tanai