半導体微細機械素子及びその製造方法 - Nippon Telegraph and Telephone Corporation

Title:

半導体微細機械素子及びその製造方法

Document Type and Number:

Japanese Patent JP5563191

Kind Code:

B2

Abstract:

To enable a micro mechanical element applicable to a cantilever or the like for an interatomic force microscope to respond at a higher speed.

The semiconductor micro mechanical element has a sacrifice layer 102 consisting of AlGaAs as a single crystal and an insulating layer 103 consisting of insulating GaAs as the single crystal on a substrate 101 consisting of GaAs having a face azimuth of (001) first. The semiconductor micro mechanical element has a conductive layer 104 consisting of conductive GaAs as the single crystal doped with silicon, a piezoelectric layer 105 consisting of insulating Al0.7Ga0.3As as the single crystal and the conductive layer 106 consisting of conductive GaAs as the single crystal doped with silicon. In the semiconductor micro mechanical element, a supporting section 111 and a movable section 112 supported by the supporting section 111 are formed by the laminated structure.

Inventors:

Koji Yamaguchi
Mabubu Imran
So Okamoto

Application Number:

JP2007310137A

Publication Date:

July 30, 2014

Filing Date:

November 30, 2007

Export Citation:

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Assignee:

Nippon Telegraph and Telephone Corporation

International Classes:

H01L41/09; H01L41/187; H01L41/22; H01L41/25; H01L41/316; H02N2/00

Domestic Patent References:

JP4332174A
JP2073162A
JP2007214411A
JP5172672A
JP2009041362A1

Attorney, Agent or Firm:

Masaki Yamakawa
Shigeki Yamakawa
Yuzo Koike

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