Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP5583315
Kind Code:
B2
Abstract:
A semiconductor device includes an active region having a groove, a gate insulating film, and a gate electrode. The gate electrode may include first and second layers. The first layer extends along the gate insulating film. The first layer is electrically conductive. The second layer extends along the first layer. The second layer is separate from the gate insulating film by the first layer.
Inventors:
Yoshihiro Kitamura
Miyazaki 亨
Miyazaki 亨
Application Number:
JP2007188084A
Publication Date:
September 03, 2014
Filing Date:
July 19, 2007
Export Citation:
Assignee:
P. S. Fau ルクスコ SARL PS4 Luxco S. a. r. l.
International Classes:
H01L29/78; H01L21/336; H01L21/8242; H01L27/108; H01L29/786
Attorney, Agent or Firm:
Patent business corporation Fukami patent firm