Title:
ヘテロアセン誘導体、テトラハロターフェニル誘導体及びそれらの製造方法
Document Type and Number:
Japanese Patent JP5585680
Kind Code:
B2
Abstract:
There are provided a heteroacene derivative having an excellent oxidation resistance and capable of forming a semiconductor active phase by a coating process, and an oxidation-resistant organic semiconductor material using the same, as well as an organic thin film. [Means for Resolution] heteroacene derivative represented by the formula (1) is obtained by tetrametalation of a tetrahaloterphenyl derivative with a metalation agent and subsequent treatment of the resulting compound with reaction agents:
wherein the substituents R 1 to R 4 are the same or different and each represents a hydrogen atom, a fluorine atom, a chlorine atom, an aryl group having 4 to 30 carbon atoms, an alkyl group having 3 to 20 carbon atoms, or a halogenated alkyl group having 1 to 20 carbon atoms; T 1 and T 2 are the same or different and each represents sulfur, selenium, tellurium, oxygen, phosphorus, boron, or aluminum; 1 and m each is an integer of 0 or 1; and rings A and B are the same or different and each has a structure represented by the following formulae (A-1) or (A-2).
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Inventors:
Masato Watanabe
Application Number:
JP2013064929A
Publication Date:
September 10, 2014
Filing Date:
March 26, 2013
Export Citation:
Assignee:
TOSOH CORP.
International Classes:
C07C17/269; C07C25/18; C07C25/22; C07D333/62; C07B61/00
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