Title:
非晶質酸化物、及び電界効果型トランジスタ
Document Type and Number:
Japanese Patent JP5589030
Kind Code:
B2
Abstract:
A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.
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Inventors:
Katsumi Nakagawa
Masafumi Sano
Hideo Hosono
Toshio Kamiya
Kenji Nomura
Masafumi Sano
Hideo Hosono
Toshio Kamiya
Kenji Nomura
Application Number:
JP2012148444A
Publication Date:
September 10, 2014
Filing Date:
July 02, 2012
Export Citation:
Assignee:
Canon, Inc.
Tokyo Institute of Technology, National University Corporation
Tokyo Institute of Technology, National University Corporation
International Classes:
H01L29/786; H01L21/336
Attorney, Agent or Firm:
Okabe 讓
Shin-ichi Usui
Takao Ochi
Seiichiro Takahashi
Hiroshi Yoshizawa
Masami Saito
Katsuhiko Kimura
Takehisa Hamaguchi
Takafumi Tanaka
Shin-ichi Usui
Takao Ochi
Seiichiro Takahashi
Hiroshi Yoshizawa
Masami Saito
Katsuhiko Kimura
Takehisa Hamaguchi
Takafumi Tanaka