Title:
III族窒化物半導体からなる半導体装置、電力変換装置
Document Type and Number:
Japanese Patent JP5589329
Kind Code:
B2
More Like This:
JP2007214251 | MANUFACTURING METHOD OF NITRIDE-BASED SEMICONDUCTOR ELEMENT |
JPS57197869 | SEMICONDUCTOR DEVICE |
JPH05218102 | FIELD EFFECT TRANSISTOR HAVING INTERNAL MATCHING CIRCUIT |
Inventors:
岡 徹
Application Number:
JP2009219254A
Publication Date:
September 17, 2014
Filing Date:
September 24, 2009
Export Citation:
Assignee:
TOYODA GOSEI CO., LTD.
International Classes:
H01L29/812; H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/861; H01L29/868
Attorney, Agent or Firm:
Osamu Fujitani