Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5596260
Kind Code:
B2
Abstract:
A semiconductor device includes: a transistor including source and drain diffusion-layers, a gate insulating film and a gate electrode; first and second plugs formed in a first interlayer-insulating film and connected to the source and drain diffusion-layers, respectively; a third plug extending through a second interlayer-insulating film and connected to the first plug; a first interconnection-wire formed on the second interlayer-insulating film and connected to the third plug; a second interconnection-wire formed on a third interlayer-insulating film and intersecting the first interconnection-wire; a fourth interlayer-insulating film; a hole extending through the fourth, third and second interlayer-insulating films, the hole being formed such that a side surface of the second interconnection-wire is exposed; and a fourth plug filling the hole via an intervening dielectric film and connected to the second plug, wherein a capacitor is formed using the fourth plug, the second interconnection-wire and the dielectric film sandwiched therebetween.
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Inventors:
Hiroyuki Uchiyama
Application Number:
JP2007195861A
Publication Date:
September 24, 2014
Filing Date:
July 27, 2007
Export Citation:
Assignee:
P. S. Fau ルクスコ SARL PS4 Luxco S. a. r. l.
International Classes:
H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Akio Miyazaki
Masaaki Ogata
Masaaki Ogata