Title:
プラズマエッチング装置
Document Type and Number:
Japanese Patent JP5601794
Kind Code:
B2
Abstract:
According to one embodiment, a plasma etching apparatus includes an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side, and an electrode cover provided along the side of the electrode.
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Inventors:
Koji Motokawa
Hideshi Tono
Hideshi Tono
Application Number:
JP2009131467A
Publication Date:
October 08, 2014
Filing Date:
May 29, 2009
Export Citation:
Assignee:
Toshiba Corp.
Shibaura Mechatronics Corp.
Shibaura Mechatronics Corp.
International Classes:
H01L21/3065; G03F1/54
Attorney, Agent or Firm:
Masatoshi Kurata
Toshihiro Fukuhara
Nobuhisa Nogawa
Peak Takashi
Naoki Kono
Sunagawa 克
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi
Toshihiro Fukuhara
Nobuhisa Nogawa
Peak Takashi
Naoki Kono
Sunagawa 克
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi