Title:
多数の垂直磁区を含む磁気トンネル接合セル
Document Type and Number:
Japanese Patent JP5607023
Kind Code:
B2
Abstract:
A particular magnetic tunnel junction (MTJ) cell includes a side wall defining a first magnetic domain adapted to store a first digital value. The MTJ cell also includes a bottom wall coupled to the side wall and defining a second magnetic domain adapted to store a second digital value.
Inventors:
Li, シャ
A can, the Sun h.
ジュ, Shao Chun
A can, the Sun h.
ジュ, Shao Chun
Application Number:
JP2011501882A
Publication Date:
October 15, 2014
Filing Date:
March 09, 2009
Export Citation:
Assignee:
クゥアルコム, Incorporated QUALCOMM INCORPORATED
International Classes:
H01L27/105; H01L21/8246; H01L29/82; H01L43/08
Attorney, Agent or Firm:
Masatoshi Kurata
Kono 哲
Makoto Nakamura
Toshihiro Fukuhara
Peak Takashi
Toshiro Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Yukinaga Yasujiro
Naoki Kono
Sunagawa 克
Hiroshi Katsumura
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi
Masanori Takeuchi
Ichihara Takuzo
Hajime Yamashita
Kono 哲
Makoto Nakamura
Toshihiro Fukuhara
Peak Takashi
Toshiro Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Yukinaga Yasujiro
Naoki Kono
Sunagawa 克
Hiroshi Katsumura
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi
Masanori Takeuchi
Ichihara Takuzo
Hajime Yamashita