Title:
薄膜トランジスタ基板
Document Type and Number:
Japanese Patent JP5609224
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a TFT substrate with superior switching characteristics that can be manufactured through simple processes.SOLUTION: The invention provides a thin-film transistor substrate comprising a flexible substrate and a thin film transistor, the thin-film transistor comprising a semiconductor layer formed on the substrate and a semiconductor-layer-contacting-insulation layer formed in contact with the semiconductor layer. At least one of the semiconductor-layer-contacting-insulation layer is a low-outgassing photosensitive polyimide insulation layer comprising low-outgassing photosensitive polyimide resin formed with a low-outgassing photosensitive polyimide resin composition with 5% weight loss temperature of 450°C or higher.
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Inventors:
福田 俊治
坂寄 勝哉
在原 慶太
坂寄 勝哉
在原 慶太
Application Number:
JP2010090988A
Publication Date:
October 22, 2014
Filing Date:
April 09, 2010
Export Citation:
Assignee:
大日本印刷株式会社
International Classes:
H01L29/786; G03F7/004; G03F7/038; H01L21/336; H01L51/05; H01L51/30
Attorney, Agent or Firm:
Akihiko Yamashita
Kishimoto Expert
Kishimoto Expert