Title:
シリコンエピタキシャルウェーハの評価方法
Document Type and Number:
Japanese Patent JP5614243
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a wafer evaluation method capable of evaluating scratches, crystal defects or particles and the like on a wafer surface in a simple, accurate and short-term manner.SOLUTION: A wafer evaluation method for evaluating surface defects of a wafer, comprises: obtaining a secondary electron image of the surface defects by an electron microscope; then clarifying an outline of the secondary electron image by binarization; then drawing a quadrangle circumscribing to the outline of the clarified and binarized secondary electron image; then calculating an areal ratio of the area of a portion of the surface defects to the area of the quadrangle or the area of a portion rather than the portion of the surface defects of the quadrangle, in the clarified and binarized secondary electron image; and then classifying types of the defects based on the areal ratio.
Inventors:
佐藤 英樹
Application Number:
JP2010244137A
Publication Date:
October 29, 2014
Filing Date:
October 29, 2010
Export Citation:
Assignee:
信越半導体株式会社
International Classes:
H01L21/66; G01N23/225; G06T1/00
Attorney, Agent or Firm:
Good Miya Mikio