Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5616038
Kind Code:
B2
Abstract:
To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.
Inventors:
山崎 舜平
宮入 秀和
宮永 昭治
秋元 健吾
白石 康次郎
宮入 秀和
宮永 昭治
秋元 健吾
白石 康次郎
Application Number:
JP2009176530A
Publication Date:
October 29, 2014
Filing Date:
July 29, 2009
Export Citation:
Assignee:
株式会社半導体エネルギー研究所
International Classes:
H01L29/786; H01L21/336
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