Title:
半導体装置及びこれを用いたスイッチングレギュレータ
Document Type and Number:
Japanese Patent JP5618733
Kind Code:
B2
Abstract:
The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.
Inventors:
福本 洋祐
村上 和宏
土井 幹也
村上 和宏
土井 幹也
Application Number:
JP2010217437A
Publication Date:
November 05, 2014
Filing Date:
September 28, 2010
Export Citation:
Assignee:
ローム株式会社
International Classes:
H02M3/155; H02M7/21
Attorney, Agent or Firm:
Shizuo Sano
Hideki Hayashida
Hideki Hayashida
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