Title:
イオン感応性電界効果トランジスタのための静電気放電保護
Document Type and Number:
Japanese Patent JP5620588
Kind Code:
B2
Abstract:
A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process.
Inventors:
ガーナー，デイビット
バイ，フア
バイ，フア
Application Number:
JP2013532274A
Publication Date:
November 05, 2014
Filing Date:
October 06, 2011
Export Citation:
Assignee:
ディーエヌエー エレクトロニクス エルティーディー
International Classes:
G01N27/414
Attorney, Agent or Firm:
Yoshihiro Kiyohara