Title:
ＩＩＩ族窒化物半導体基板およびＩＩＩ族窒化物半導体基板の製造方法
Document Type and Number:
Japanese Patent JP5620762
Kind Code:
B2
Inventors:
小林 智浩
錦織 豊
錦織 豊
Application Number:
JP2010202289A
Publication Date:
November 05, 2014
Filing Date:
September 09, 2010
Export Citation:
Assignee:
古河機械金属株式会社
International Classes:
C30B29/38; C30B33/06
Attorney, Agent or Firm:
Shinji Hayami