Title:
半導体装置の製造装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5620996
Kind Code:
B2
Abstract:
One semiconductor manufacturing apparatus (100) according to the present invention comprises: a synthesis device (10) which synthesizes hydrogen cyanide by causing a methane gas or a methanol gas to react with an ammonia gas using, as a catalyst, a non-alkaline fiber material or at least one metal selected from the group consisting of platinum, silver, copper, nickel, palladium and gold; a dissolution device (20) which produces a cyanide ion-containing solution by dissolving the hydrogen cyanide in water or methanol that serves as a solvent and adjusts the pH value of the cyanide ion-containing solution to 8-10.5 (inclusive); and a semiconductor processing vessel (30) which immerses a semiconductor layer or a semiconductor substrate into the cyanide ion-containing solution that has the thus-adjusted pH value. The semiconductor manufacturing apparatus (100) is additionally provided with channels (14, 24), which are blocked from the outside air and through which the hydrogen cyanide or the cyanide ion-containing solution passes, respectively between the synthesis device (10) and the dissolution device (20) and between the dissolution device (20) and the semiconductor processing vessel (30).
Inventors:
小林 光
Application Number:
JP2012530453A
Publication Date:
November 05, 2014
Filing Date:
August 24, 2010
Export Citation:
Assignee:
小林 光
株式会社ＫＩＴ
株式会社ＫＩＴ
International Classes:
H01L21/304; B01J23/42; B08B3/08
Domestic Patent References:
| JP2005039198A | 2005-02-10 | |||
| JP2006519154A | 2006-08-24 |
Attorney, Agent or Firm:
Hiroaki Kono