Title:
半導体装置
Document Type and Number:
Japanese Patent JP5630926
Kind Code:
B2
Abstract:
A semiconductor device including a plurality of units having identical structures, each unit includes: a drain electrode; a drift layer that includes a low concentration layer on the drain electrode and a reference concentration layer on the low concentration layer, a gate electrode on the reference concentration layer; a pair of source regions that are provided on an upper surface of the reference concentration layer and in the vicinity of both ends of the gate electrode; a pair of base regions that surround outer surfaces of the source regions; a source electrode electrically connected to the source regions and the base regions; and a pair of depletion-layer extension regions that are respectively provided under the base regions in the reference concentration region. Boundaries between the depletion-layer extension regions and the low concentration layer are positioned lower than a boundary between the reference concentration layer and the low concentration layer.
Inventors:
宮腰 宣樹
Application Number:
JP2013108382A
Publication Date:
November 26, 2014
Filing Date:
May 22, 2013
Export Citation:
Assignee:
新電元工業株式会社
International Classes:
H01L29/78; H01L21/336; H01L29/06
Attorney, Agent or Firm:
Sumio Tanai
Yasushi Matsunuma
Yuji Masui
Toshio Komuro
Yasushi Matsunuma
Yuji Masui
Toshio Komuro
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