Title:
多結晶シリコンの製造方法及び製造装置
Document Type and Number:
Japanese Patent JP5633219
Kind Code:
B2
Abstract:
A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
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Inventors:
漆原 誠
水嶋 一樹
水嶋 一樹
Application Number:
JP2010160105A
Publication Date:
December 03, 2014
Filing Date:
July 14, 2010
Export Citation:
Assignee:
三菱マテリアル株式会社
International Classes:
C01B33/035
Attorney, Agent or Firm:
Aoyama Masakazu