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Title:
プラズマ処理装置
Document Type and Number:
Japanese Patent JP5639866
Kind Code:
B2
Abstract:
The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.

Inventors:
属 優作
西尾 良司
川口 忠義
Application Number:
JP2010269875A
Publication Date:
December 10, 2014
Filing Date:
December 03, 2010
Export Citation:
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Assignee:
株式会社日立ハイテクノロジーズ
International Classes:
H01L21/3065; H05H1/46
Attorney, Agent or Firm:
Manabu Inoue
Yuji Toda
Shigemi Iwasaki



 
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