Title:
光情報取得素子、光情報取得素子アレイ及びハイブリッド型固体撮像装置
Document Type and Number:
Japanese Patent JP5648964
Kind Code:
B2
Abstract:
A optical-information acquisition element encompasses a semiconductor layer (31) of a p-type, a surface-buried region (33) of a n-type buried in the semiconductor layer (31) so as to implement a photodiode with the semiconductor layer (31), a charge-accumulation region (36) of the n-type buried in the surface-buried region (33), configured to accumulate charges generated by the photodiode, a barrier-creating region of the p-type buried in the surface-buried region (33) so as to sandwich the surface-buried region (33) with the semiconductor layer (31), configured to create a potential barrier, and a charge-exhaust region (34) of the n-type buried in the semiconductor layer (31), configured to store and to extract excess charges which surmount the potential barrier and flow out from the charge-accumulation region (36). The changes of potential level of the charge-accumulation region (36) are extracted as signals, after receiving optical-communication signals. An optical-information-acquisition element array and a hybrid solid-state imaging device are also provided.
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Inventors:
川人 祥二
Application Number:
JP2011552848A
Publication Date:
January 07, 2015
Filing Date:
February 04, 2011
Export Citation:
Assignee:
国立大学法人静岡大学
International Classes:
H01L27/146; H01L27/144; H04N5/369
Domestic Patent References:
| JPH05251684A | 1993-09-28 | |||
| JPS62230273A | 1987-10-08 | |||
| JPH11112006A | 1999-04-23 | |||
| JPH05251684A | 1993-09-28 | |||
| JPS62230273A | 1987-10-08 | |||
| JPH11112006A | 1999-04-23 |
Foreign References:
| WO2010092928A1 | 2010-08-19 | |||
| US6372537B1 | 2002-04-16 | |||
| WO2010092928A1 | 2010-08-19 |
Attorney, Agent or Firm:
Sobei Suzuki