強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜

Title:

強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜

Document Type and Number:

Japanese Patent JP5655274

Kind Code:

B2

Abstract:

To provide a composition for ferroelectric thin film formation which provides lower leakage current density and a higher dielectric breakdown strength voltage than the conventional ferroelectric thin film and is suitable for thin film capacitor application, to provide a method for ferroelectric thin film formation and to provide a ferroelectric thin film formed by the method.

The composition for ferroelectric thin film formation is used for formation of one kind of ferroelectric thin film selected from a group consisting of PLZT, PZT and PT and is a liquid composition for formation of a thin film assuming a mixed composite metal oxide prepared by mixing a composite metal oxide (B) including Si with a composite metal oxide (A) represented by general formula: (PbxLay)(ZrzTi(1-z))O3(in the formula, 0.9COPYRIGHT: (C)2011,JPO&INPIT

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Inventors:

藤井順
野口毅
桜井英章
曽山信幸

Application Number:

JP2009085819A

Publication Date:

January 21, 2015

Filing Date:

March 31, 2009

Export Citation:

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Assignee:

三菱マテリアル株式会社

International Classes:

C01G25/00; C01G23/00; H01B3/00; H01B3/12; H01G4/12; H01G4/33; H01L21/316; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/105; H01L27/108; H01L41/18; H01L41/23; H01L41/39

Attorney, Agent or Firm:

Masayoshi Suda

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