Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5668414
Kind Code:
B2
Abstract:
A silicon carbide substrate (SB) has a substrate surface (12B). A gate insulating film (15) is provided to cover a part of the substrate surface (12B). A gate electrode (17) covers a part of the gate insulating film (15). A contact electrode (16) is provided on the substrate surface (12B), adjacent to and in contact with the gate insulating film (15), and it contains an alloy having Al atoms. Al atoms do not diffuse from the contact electrode (16) into a portion of the gate insulating film (15) lying between the substrate surface (12B) and the gate electrode (17). Thus, in a case where a contact electrode having Al atoms is employed, reliability of the gate insulating film (15) of a semiconductor device can be improved
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Inventors:
玉祖 秀人
Application Number:
JP2010245150A
Publication Date:
February 12, 2015
Filing Date:
November 01, 2010
Export Citation:
Assignee:
住友電気工業株式会社
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12
Attorney, Agent or Firm:
Patent business corporation Fukami patent firm