Title:
半導体光デバイスの製造方法
Document Type and Number:
Japanese Patent JP5678528
Kind Code:
B2
Abstract:
A method for manufacturing includes the steps of forming a BCB resin region on a semiconductor optical device; processing a surface of the BCB resin region with inductively coupled plasma produced with a high-frequency power supply for supplying ICP power and a high-frequency power supply for supplying bias power, thus forming a silicon oxide film on the surface of the BCB resin region and roughening the surface of the BCB resin region with projections and recesses; and forming an electrode pad on the surface of the BCB resin region in direct contact with the silicon oxide film. The surface roughness of the BCB resin region and the thickness of the silicon oxide film on the surface of the BCB resin region are controlled by adjusting the bias power and the ICP power.
Inventors:
辻 幸洋
Application Number:
JP2010200266A
Publication Date:
March 04, 2015
Filing Date:
September 07, 2010
Export Citation:
Assignee:
住友電気工業株式会社
International Classes:
H01S5/042
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Ichiro Kondo
Yoshiki Kuroki
Ichiro Kondo